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Mustafa Emre Çelik
33 articles
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  • Now, if a voltage is applied between the drain and source, the current flows freely between the source and drain and the gate voltage controls the electrons in the channel
  • When we apply positive gate voltage the holes present under the oxide layer with a repulsive force and holes are pushed downward with the substrate
  • semiconductor surface at the below oxide layer which is located between source and drain terminals. It can be inverted from p-type to n-type by applying positive or negative gate voltages.
  • It is insulated from the channel near an extremely thin layer of metal oxide.
  • particularly useful in amplifiers due to their input impedance being nearly infinite which allows the amplifier to capture almost all the incoming signal.
  • It is used for switching or amplifying signals
  • input current
  • Depletion Type:
  • Gate-Source voltage (VGS) to switch the device “OFF
  • depletion-mode MOSFET is equivalent to a “Normally Closed” switch
  • Enhancement Type
  • The transistor requires a Gate-Source voltage(VGS) to switch the device “ON
  • “Normally Open”
  • source(S)
  • gate (G),
  • rain (D
  • , drain (D
  • (D)
  • body (B)
  • body is frequently connected to the source terminal
  • reducing the terminals to three
  • The charge carriers enter the channel at source and exit via the drain
  • width of the channel is controlled by the voltage on an electrode is called gate which is located between source and drain
  • The working of a MOSFET depends upon the MOS capacitor. The MOS capacitor is the main part of MOSFET
  • The drain and source are heavily doped p+ region and the substrate is in n-type
  • When we apply negative gate voltage, the electrons present beneath the oxide layer experience repulsive force and they are pushed downward in to the substrate
  • The drain and source are heavily doped n+ region and the substrate is p-type
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